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| 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z (Previous ADE-208-978(Z)) Rev.2.00 Oct.21.2003 Features * High gain bandwidth product fT = 28 GHz typ. * High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is "VH"-. Rev.2.00, Oct.21.2003, page 1 of 7 2SC5624 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 0.8 35 100 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10 -- -- -- 80 -- 25 14 -- Typ -- -- -- -- 120 0.3 28 18 1.2 Max -- 1 1 10 160 0.6 -- -- 1.6 pF GHz dB dB Unit V A A A Test Conditions IC = 10 A , IE = 0 VCB = 8 V , IE = 0 VCE = 3 V , RBE = VEB = 0.8 V , IC = 0 VCE = 2 V , IC = 20 mA VCB = 2 V , IE = 0 f = 1 MHz VCE = 2 V , IC = 30 mA f = 2 GHz VCE = 2 V, IC = 30 mA f = 1.8 GHz VCE = 2 V, IC = 5 mA f = 1.8 GHz Rev.2.00, Oct.21.2003, page 2 of 7 2SC5624 Main Characteristics Maximum Collector Dissipation Curve DC Current Transfer Ratio vs. Collector Current VCE = 2 V Pc (mW) 200 200 Collector Power Dissipation DC Current Transfer Ratio 50 100 150 Ta (C) 200 150 hFE 100 100 50 0 0 1 2 5 10 20 50 100 Ambient Temperature Collector Current IC (mA) (pF) 1.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 50 Gain Bandwidth Product vs. Collector Current fT (GHz) Cob 0.8 40 VCE = 2 V Collector Output Capacitance Gain Bandwidth Product 0.2 0.5 1 2 5 VCB (V) 10 0.6 30 20 0.4 0.2 10 0 0.1 0 1 2 5 10 20 50 100 Collector to Base Voltage Collector Current IC (mA) Rev.2.00, Oct.21.2003, page 3 of 7 2SC5624 Power Gain vs. Collector Current 20 f = 1.8 GHz 16 PG (dB) Noise Figure vs. Collector Current 5 VCE = 2 V NF (dB) VCE = 2 V 4 f = 1.8 GHz 12 3 Power Gain 8 Noise Figure 2 4 1 0 1 0 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) 20 |S21|2 (dB) S21 Parameter vs. Collector Current f = 2 GHz VCE = 2 V 16 12 S21 Parameter 8 4 0 1 2 5 10 20 50 IC (mA) 100 Collector Current Rev.2.00, Oct.21.2003, page 4 of 7 2SC5624 S21 Parameter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1 -1.5 -2 -120 -90 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 12 / div. 60 -150 -30 -60 Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step) Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.02 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -2 -.6 -.8 -1 -1.5 -5 -4 -3 -120 -60 -90 Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step) Condition ; VCE = 2 V, IC = 30 mA 100 to 3000 MHz (100 MHz step) Rev.2.00, Oct.21.2003, page 5 of 7 2SC5624 S parameter (VCE = 2 V, IC = 30 mA, Zo = 50 ) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 0.445 0.447 0.439 0.432 0.424 0.414 0.407 0.398 0.390 0.386 0.381 0.377 0.371 0.370 0.367 0.368 0.370 0.360 0.365 0.365 0.362 0.372 0.370 0.372 0.378 0.370 0.382 0.388 0.387 0.388 ANG -27.3 -54.4 -78.7 -98.8 -112.8 -124.3 -133.4 -141.5 -147.9 -154.1 -159.0 -164.0 -167.8 -171.8 -175.7 -178.8 178.0 174.7 172.0 168.9 166.8 164.1 160.9 159.0 156.6 154.5 152.2 150.7 147.6 146.9 S21 MAG 46.66 42.27 36.16 30.59 25.84 22.15 19.22 16.94 15.05 13.63 12.45 11.48 10.60 9.84 9.23 8.66 8.16 7.72 7.33 6.95 6.66 6.35 6.08 5.86 5.64 5.42 5.24 5.03 4.86 4.72 ANG 163.5 147.1 133.0 122.2 114.5 108.9 104.4 100.8 97.7 95.3 93.3 91.3 89.6 87.7 86.1 84.7 83.4 82.2 80.8 79.4 78.2 77.0 75.6 74.6 73.5 72.3 71.3 70.3 69.0 67.9 S12 MAG 0.0055 0.0115 0.0165 0.0207 0.0246 0.0277 0.0307 0.0335 0.0372 0.0398 0.0420 0.0452 0.0480 0.0509 0.0535 0.0567 0.0595 0.0623 0.0651 0.0682 0.0709 0.0737 0.0764 0.0795 0.0824 0.0848 0.0874 0.0906 0.0928 0.0964 ANG 83.8 78.6 73.6 68.8 67.1 66.1 65.0 65.3 64.4 65.1 65.2 65.0 64.5 64.7 64.3 64.1 64.4 64.3 64.0 63.8 63.1 63.0 62.3 62.3 62.0 61.6 61.7 60.7 61.0 59.7 S22 MAG 0.904 0.846 0.750 0.650 0.561 0.487 0.426 0.376 0.335 0.301 0.273 0.250 0.229 0.213 0.197 0.186 0.173 0.164 0.156 0.148 0.142 0.135 0.130 0.125 0.121 0.117 0.113 0.109 0.105 0.102 ANG -12.9 -26.8 -39.3 -48.8 -55.9 -61.4 -65.3 -68.6 -70.7 -72.5 -73.7 -74.5 -74.9 -75.1 -75.2 -74.7 -74.7 -74.0 -73.6 -72.7 -72.0 -71.3 -70.8 -69.9 -68.7 -68.5 -67.1 -66.8 -65.7 -65.5 Rev.2.00, Oct.21.2003, page 6 of 7 2SC5624 Package Dimensions As of January, 2003 Unit: mm 2.0 0.2 1.3 0.2 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - 0.425 0.65 0.65 0.16- 0.06 + 0.1 1.25 0.1 2.1 0.3 0 - 0.1 0.2 0.9 0.1 0.65 0.6 1.25 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.4 + 0.05 - Package Code JEDEC JEITA Mass (reference value) CMPAK-4(T) -- Conforms 0.006 g Rev.2.00, Oct.21.2003, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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